The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Mar. 23, 2018
Globalwafers Co., Ltd., Hsinchu, TW;
Che-Ming Liu, Hsinchu, TW;
Man-Hsuan Lin, Hsinchu, TW;
Chih-Yuan Chuang, Hsinchu, TW;
Shuo-Hung Hsu, Hsinchu, TW;
Chuan-Wei Tsou, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
GLOBALWAFERS CO., LTD., Hsinchu, TW;
Abstract
An epitaxial substrate and a method for forming the same are disclosed. The epitaxial substrate includes a substrate, a deposition layer, a buffer layer and an epitaxial layer. The deposition layer is directly formed on the substrate, wherein the deposition layer includes a gradient doping concentration, and has a first surface and a second surface which are opposite to each other; the gradient doping concentration has a minimum value at the first surface. The buffer layer is formed on the deposition layer, and an epitaxial layer is formed on the buffer layer. The epitaxial layer is mainly formed of group III-V nitride. The substrate and the deposition layer are formed of homogeneous material. Since the deposition layer is directly formed on the substrate, and the deposition layer and the substrate are formed of a homogeneous material, the epitaxial substrate includes a good heat dissipation efficiency and low leakage current.