The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Jun. 11, 2018
Tokyo Electron Limited, Tokyo, JP;
Hideomi Hane, Nirasaki, JP;
Kentaro Oshimo, Nirasaki, JP;
Shimon Otsuki, Oshu, JP;
Jun Ogawa, Nirasaki, JP;
Noriaki Fukiage, Nirasaki, JP;
Hiroaki Ikegawa, Nirasaki, JP;
Yasuo Kobayashi, Nirasaki, JP;
Takeshi Oyama, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.