The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Feb. 19, 2016
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Osaka University, Osaka, JP;
Michael Carcasi, Austin, TX (US);
Benjamen M. Rathsack, Austin, TX (US);
Mark H. Somervell, Austin, TX (US);
Wallace P. Printz, Austin, TX (US);
Seiji Nagahara, Sagamihara Kanagawa, JP;
Seiichi Tagawa, Osaka, JP;
Osaka University, Osaka, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.