The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Mar. 31, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Veronica A. Strong, Chandler, AZ (US);
Sasha N. Oster, Chandler, AZ (US);
Feras Eid, Chandler, AZ (US);
Aranzazu Maestre Caro, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 2/10 (2006.01); H01M 4/04 (2006.01); C23C 18/38 (2006.01); C23C 18/16 (2006.01); B32B 5/24 (2006.01); G06F 1/16 (2006.01); H01L 23/538 (2006.01); C23C 18/20 (2006.01); C23C 18/30 (2006.01); H01M 4/66 (2006.01); H01M 10/04 (2006.01); A41D 1/00 (2018.01); A61B 5/00 (2006.01); H05K 1/03 (2006.01); A61B 5/01 (2006.01); A61B 5/024 (2006.01); A61B 5/145 (2006.01);
U.S. Cl.
CPC ...
H01M 2/1066 (2013.01); B32B 5/24 (2013.01); C23C 18/1641 (2013.01); C23C 18/2086 (2013.01); C23C 18/30 (2013.01); C23C 18/38 (2013.01); G06F 1/163 (2013.01); H01L 23/5387 (2013.01); H01M 4/0402 (2013.01); H01M 4/661 (2013.01); H01M 10/0422 (2013.01); H01M 10/0436 (2013.01); A41D 1/002 (2013.01); A61B 5/01 (2013.01); A61B 5/024 (2013.01); A61B 5/14532 (2013.01); A61B 5/4266 (2013.01); A61B 5/6804 (2013.01); H01M 2220/30 (2013.01); H05K 1/038 (2013.01); H05K 2201/10037 (2013.01);
Abstract
An apparatus system is provided which comprises: a fabric; a self-assembled monolayer (SAM) material formed on the fabric; and a battery cell formed on the fabric, wherein a current collector of the battery cell is at least in part formed on the SAM material.