The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Jun. 12, 2015
Intel Corporation, Santa Clara, CA (US);
Glenn A. Glass, Portland, OR (US);
Anand S. Murthy, Portland, OR (US);
Hei Kam, Hillsboro, OR (US);
Tahir Ghani, Portland, OR (US);
Karthik Jambunathan, Hillsboro, OR (US);
Chandra S. Mohapatra, Beaverton, OR (US);
INTEL Corporation, Santa Clara, CA (US);
Abstract
Techniques are disclosed for forming transistors on the same substrate with varied channel materials. The techniques include forming a replacement material region in the substrate, such region used to form a plurality of fins therefrom, the fins used to form transistor channel regions. In an example case, the substrate may comprise Si and the replacement materials may include Ge, SiGe, and/or at least one III-V material. The replacement material regions can have a width sufficient to ensure a substantially planar interface between the replacement material and the substrate material. Therefore, the fins formed from the replacement material regions can also have a substantially planar interface between the replacement material and the substrate material. One example benefit from being able to form replacement material channel regions with such substantially planar interfaces can include at least a 30 percent improvement in current flow at a fixed voltage.