The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Jun. 13, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Teng-Chun Tsai, Hsinchu, TW;
Li-Ting Wang, Hsinchu, TW;
De-Fang Chen, Hsinchu, TW;
Cheng-Tung Lin, Hsinchu County, TW;
Chih-Tang Peng, Hsinchu County, TW;
Chien-Hsun Wang, Hsinchu, TW;
Bing-Hung Chen, New Taipei, TW;
Huan-Just Lin, Hsinchu, TW;
Yung-Cheng Lu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.