The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Jan. 12, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Gon-jun Kim, Suwon-si, KR;
Yuri Barsukov, Suwon-si, KR;
Vladimir Volynets, Hwaseong-si, KR;
Dali Liu, Yongin-si, KR;
Sang-jin An, Suwon-si, KR;
Beom-jin Yoo, Hwaseong-si, KR;
Sang-heon Lee, Seongnam-si, KR;
Shamik Patel, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH, SiH, CHF, and CHFto a process chamber.