The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Oct. 31, 2017
American Air Liquide, Inc., Fremont, CA (US);
Air Liquide Electronics U.s. Lp, Dallas, TX (US);
L'air Liquide, Société Anonyme Pour L'etude ET L'exploitation Des Procédés Georges Claude, Paris, FR;
Hui Sun, Newark, DE (US);
Fabrizio Marchegiani, Bear, DE (US);
James Royer, Bear, DE (US);
Nathan Stafford, Damascus, OR (US);
Rahul Gupta, St. Louis, MO (US);
American Air Liquide, Inc., Fremont, CA (US);
Air Liquide Electronics US. LP, Dallas, TX (US);
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Paris, FR;
Abstract
A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (CHFN), 1,1,2-Trifluoroethan-1-amine (Iso-CHFN), 2,2,3,3,3-Pentafluoropropylamine (CHFN), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-CHFN), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—CHFN) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—CHFN), 1,1,1,3,3,3-Hexafluoroisopropylamine (CHFN) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-CHFN) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.