The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Dec. 22, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Tsong-Hua Ou, Taipei, TW;
Ken-Hsien Hsieh, Taipei, TW;
Shih-Ming Chang, Hsinchu County, TW;
Wen-Chun Huang, Tainan, TW;
Chih-Ming Lai, Hsinchu, TW;
Ru-Gun Liu, Hsinchu County, TW;
Tsai-Sheng Gau, HsinChu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
The present disclosure provides a method that includes forming a first pattern feature and a second pattern feature over a material layer by a first photolithographic process. The method also includes forming a first spacer feature on a sidewall of the first pattern feature and a second spacer feature on a sidewall of the second pattern feature. Additionally, the method includes forming a third pattern feature on the material layer between the first spacer feature and the second spacer feature by a second photolithographic process. In addition, the method includes removing the first and second spacer features to expose a portion of the material layer.