The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Jul. 30, 2014
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Hiroki Kawada, Tokyo, JP;

Katsuhiro Sasada, Tokyo, JP;

Takenori Hirose, Tokyo, JP;

Shou Takami, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 15/00 (2006.01); G01B 11/06 (2006.01); G01B 15/02 (2006.01);
U.S. Cl.
CPC ...
G01B 11/0608 (2013.01); G01B 11/0625 (2013.01); G01B 15/02 (2013.01); G01B 2210/56 (2013.01);
Abstract

A pattern height measurement device capable of high-precision measurement of the dimensions of a fine pattern, and a charged particle beam device are provided. The pattern height measurement device includes a calculation device that determines dimensions of a sample, in the height direction, based on first reflected light information obtained by dispersing light reflected from a sample. The calculation device determines second reflected light information based on a formula for the relationship between the value for the dimension in the sample surface direction of a pattern formed upon the sample, obtained by irradiation of a charged particle beam on the sample, the value for the dimension in the height direction of the sample, and reflected light information; compares a second reflected light intensity and the first reflected light information; and outputs the value for the dimension in the height direction of the sample in the second reflected light information.


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