The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Mar. 15, 2018
Globalwafers Co., Ltd., Hsinchu, TW;
Chun-I Fan, Hsinchu, TW;
Chih-Yuan Chuang, Hsinchu, TW;
Man-Hsuan Lin, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
An epitaxial substrate and a method of manufacturing the same are provided. The epitaxial substrate includes a handle substrate, a heat dissipation layer on the handle substrate, a high-resistance silicon substrate on the heat dissipation layer, and a III-V semiconductor layer grown on the high-resistance silicon substrate. The heat dissipation layer has high thermal conductivity. The high-resistance silicon substrate has a resistance more than 100 ohm·cm. Diameters of the high-resistance silicon substrate and the III-V semiconductor film are smaller than a diameter of the handle substrate, such that the epitaxial substrate is a convex substrate.