The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Aug. 10, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Che-Cheng Chang, New Taipei, TW;
Jr-Jung Lin, Hsinchu, TW;
Shih-Hao Chen, Hsinchu County, TW;
Chih-Han Lin, Hsinchu, TW;
Mu-Tsang Lin, Changhua County, TW;
Yung Jung Chang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A semiconductor device includes a substrate having a fin projecting upwardly through an isolation structure over the substrate; a gate stack over the isolation structure and engaging the fin; and a gate spacer on a sidewall of the gate stack and in physical contact with the gate stack. The semiconductor device further includes a first dielectric layer vertically between the fin and the gate spacer and in physical contact with the sidewall of the gate stack, wherein the first dielectric layer has a laterally extending cavity. The semiconductor device further includes a second dielectric layer filling in the cavity, wherein the first and second dielectric layers include different materials.