The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Mar. 26, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shu-Hui Su, Tucheng, TW;
Cheng-Lin Huang, Hsinchu, TW;
Jiing-Feng Yang, Zhubei, TW;
Zhen-Cheng Wu, Hsinchu, TW;
Ren-Guei Wu, Taoyuan, TW;
Dian-Hau Chen, Hsinchu, TW;
Yuh-Jier Mii, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure comprises a first conductive material-containing layer. The first conductive material-containing layer comprises a dielectric material, at least two conductive structures in the dielectric material, and an air-gap region in the dielectric material between the at least two conductive structures. The semiconductor structure also comprises a capping layer over the at least two conductive structures and the air-gap region. The semiconductor structure further comprises a second conductive material-containing layer over the capping layer. The second conductive material-containing layer comprises a via plug electrically connected to one of the at least two conductive structures. The via plug is separated from the air-gap region by at least a first predetermined distance. The semiconductor structure additionally comprises a conductive pad over the second conductive material-containing layer. The conductive pad is offset from the air-gap region by at least a second predetermined distance.