The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Feb. 02, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tien-Pei Chou, Taichung, TW;
Ken-Yu Chang, Hsinchu, TW;
Chun-Chieh Wang, Kaohsiung, TW;
Yueh-Ching Pai, Taichung, TW;
Yu-Ting Lin, Tainan, TW;
Yu-Wen Cheng, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure relates generally to techniques for forming a continuous adhesion layer for a contact plug. A method includes forming an opening through a dielectric layer to an active area on a substrate. The method includes performing a first plasma treatment along a sidewall of the opening. The method includes performing an atomic layer deposition (ALD) process to form a metal nitride layer along the sidewall of the opening. The ALD process includes a plurality of cycles. Each cycle includes flowing a precursor to form a metal monolayer along the sidewall and performing a second plasma treatment to treat the metal monolayer with nitrogen. The method includes depositing a conductive material on the metal nitride layer in the opening to form a conductive feature.