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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10312079 B1

PDFFull Text
Date of Patent:
Jun. 04, 2019

Filed:

Sep. 25, 2015

Etching method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Koji Takeya, Yamanashi, JP;

Kazuaki Nishimura, Yamanashi, JP;

Nobuhiro Takahashi, Yamanashi, JP;

Junichiro Matsunaga, Yamanashi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:
Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3065 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 29/165 (2006.01); G05B 19/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02381 (2013.01); C23C 16/45557 (2013.01); H01J 37/32009 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01); H01L 29/165 (2013.01); G05B 19/04 (2013.01); G05B 2219/45212 (2013.01);
Abstract

An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas which comprises Hgas and Ar gas in an excited state; and selectively etching the silicon with respect to the silicon-germanium by the processing gas which is in the excited state. Due to this configuration, silicon can be etched, with high selectivity, with respect to the silicon-germanium.

Find Patent Forward Citations

Takeya, Koji. (2019). Etching method (U.S. Patent No. 10312079). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10312079

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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