The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Apr. 13, 2018
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Keren Jacobs Kanarik, Los Altos, CA (US);
Samantha Tan, Fremont, CA (US);
Thorsten Lill, Santa Clara, CA (US);
Meihua Shen, Fremont, CA (US);
Yang Pan, Los Altos, CA (US);
Jeffrey Marks, Saratoga, CA (US);
Richard Wise, Los Gatos, CA (US);
Assignee:
LAM RESEARCH CORPORATION, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/321 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); G03F 1/60 (2012.01); C23F 1/22 (2006.01); G03F 1/22 (2012.01); C23F 4/00 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01J 37/321 (2013.01); C23F 4/00 (2013.01); G03F 1/22 (2013.01); G03F 1/60 (2013.01); H01L 21/302 (2013.01); H01L 21/3065 (2013.01); H01L 21/30621 (2013.01); H01L 21/3105 (2013.01); H01L 21/31122 (2013.01); H01L 21/321 (2013.01); H01L 21/32136 (2013.01); H01J 2237/334 (2013.01);
Abstract
Methods of etching and smoothening films by exposing to a halogen-containing plasma and an inert plasma within a bias window in cycles are provided. Methods are suitable for etching and smoothening films of various materials in the semiconductor industry and are also applicable to applications in optics and other industries.