The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Jul. 21, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Li-Hsien Huang, Hsinchu County, TW;

An-Jhih Su, Taoyuan, TW;

Hsien-Wei Chen, Hsinchu, TW;

Hua-Wei Tseng, New Taipei, TW;

Jo-Mei Wang, New Taipei, TW;

Tien-Chung Yang, Hsinchu, TW;

Kuan-Chung Lu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/552 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/485 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 23/3114 (2013.01); H01L 23/5382 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 23/552 (2013.01); H01L 25/50 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06555 (2013.01); H01L 2225/06582 (2013.01); H01L 2225/06593 (2013.01);
Abstract

A package structure has first and second dies, a molding compound, a first redistribution layer, at least one first through interlayer via (TIV), second through interlayer vias (TIVs), an electromagnetic interference shielding layer and conductive elements. The first die is molded in the molding compound. The second die is disposed on the molding compound. The first redistribution layer is located between the conductive elements and the molding compound and electrically connected to the first and second dies. The molding compound is located between the second die and the first redistribution layer. The first and second TIVs are molded in the molding compound and electrically connected to the first redistribution layer. The second TIVs are located between the first die and the first TIV. The electromagnetic interference shielding layer is in contact with the first TIV. The conductive elements are connected to the first redistribution layer.


Find Patent Forward Citations

Loading…