The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
May. 22, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jui-Ching Wu, Hsinchu, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Chia-Chen Chen, Hsinchu, TW;
Shu-Hao Chang, Taipei, TW;
Shang-Chieh Chien, New Taipei, TW;
Ming-Chin Chien, Hsinchu, TW;
Anthony Yen, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.