The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Oct. 31, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Mirng-Ji Lii, Hsinchu County, TW;

Hung-Yi Kuo, Taipei, TW;

Hao-Yi Tsai, Hsinchu, TW;

Tsung-Yuan Yu, Taipei, TW;

Min-Chien Hsiao, Taichung, TW;

Chao-Wen Shih, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 29/40 (2006.01); H01L 21/765 (2006.01); H01L 23/00 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 21/765 (2013.01); H01L 23/5223 (2013.01); H01L 23/5227 (2013.01); H01L 23/525 (2013.01); H01L 23/562 (2013.01); H01L 24/05 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/10126 (2013.01);
Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure includes a circuit region, a seal ring region and an assembly isolation region. The circuit region includes a first conductive layer. The seal ring region includes a second conductive layer. The assembly isolation region is between the circuit region and the seal ring region. The first conductive layer and the second conductive layer respectively include a portion extending into the assembly isolation region thereby forming an electric component in the assembly isolation region.


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