The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Mar. 20, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Chun Tsai, Hsinchu, TW;
Hung-Pin Chang, Taipei, TW;
Ku-Feng Yang, Baoshan Township, TW;
Yi-Hsiu Chen, Hsinchu, TW;
Wen-Chih Chiou, Zhunan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.