The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Dec. 02, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Marc A. Bergendahl, Troy, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Fee Li Lie, Albany, NY (US);
Eric R. Miller, Schenectady, NY (US);
Jeffrey C. Shearer, Albany, NY (US);
John R. Sporre, Albany, NY (US);
Sean Teehan, Rensselaer, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/16 (2013.01); H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/6656 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/78618 (2013.01); H01L 29/78651 (2013.01); H01L 29/78696 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A semiconductor device comprises a nanowire arranged over a substrate, a gate stack arranged around the nanowire, a spacer arranged along a sidewall of the gate stack, a cavity defined by a distal end of the nanowire and the spacer, and a source/drain region partially disposed in the cavity and in contact with the distal end of the nanowire.