The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Jul. 28, 2014
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Chuan Hu, Chandler, AZ (US);

Chia-Pin Chiu, Tempe, AZ (US);

Johanna Swan, Scottsdale, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0655 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/49811 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/96 (2013.01); H01L 25/50 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 2224/12105 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/3511 (2013.01);
Abstract

An apparatus is described having a build-up layer. The build-up layer has a pad side of multiple die pressed into a bottom side of the build-up layer. The multiple die have wide pads to facilitate on wafer testing of the multiple die. The wide pads are spaced a minimum distance permitted by a manufacturing process used to manufacture their respective die. The build-up layer above the wide pads is removed. The apparatus also includes metallization on a top side of the build-up layer that substantially fills regions above the wide pads. The metallization includes lands above the wide pads and multiple wires between the wide pads.


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