The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
Jun. 28, 2016
Applied Materials, Inc., Santa Clara, CA (US);
Yang Yang, San Diego, CA (US);
Lucy Chen, Santa Clara, CA (US);
Jie Zhou, San Jose, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Kenneth S. Collins, San Jose, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Chentsau Ying, Cupertino, CA (US);
Jingjing Liu, Milpitas, CA (US);
Steven Lane, Porterville, CA (US);
Gonzalo Monroy, Santa Clara, CA (US);
James D. Carducci, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.