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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10242906 B1

PDFFull Text
Date of Patent:
Mar. 26, 2019

Filed:

Aug. 04, 2017

Semiconductor structure with integrated passive structures

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Anthony I. Chou, Beacon, NY (US);

Arvind Kumar, Beacon, NY (US);

Renee T. Mo, Yorktown Heights, NY (US);

Shreesh Narasimha, Beacon, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Jennifer M. Anda

Andrew M. Calderon

Roberts Mlotkowski Safran Cole & Calderon P.C.

Primary Examiner:

Thinh T Nguyen

Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/762 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/3213 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 23/525 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 27/08 (2006.01); H01L 21/763 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76283 (2013.01); H01L 21/02065 (2013.01); H01L 21/02181 (2013.01); H01L 21/2253 (2013.01); H01L 21/265 (2013.01); H01L 21/2652 (2013.01); H01L 21/26513 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/28123 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/30604 (2013.01); H01L 21/31053 (2013.01); H01L 21/31055 (2013.01); H01L 21/31116 (2013.01); H01L 21/324 (2013.01); H01L 21/32055 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 21/76224 (2013.01); H01L 21/8234 (2013.01); H01L 21/823481 (2013.01); H01L 21/84 (2013.01); H01L 23/5227 (2013.01); H01L 23/5256 (2013.01); H01L 27/0617 (2013.01); H01L 27/0629 (2013.01); H01L 27/1203 (2013.01); H01L 28/10 (2013.01); H01L 28/20 (2013.01); H01L 29/0649 (2013.01); H01L 29/42372 (2013.01); H01L 29/495 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 21/763 (2013.01); H01L 27/08 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/3011 (2013.01);
Abstract

A metal-oxide-semiconductor field-effect transistor (MOSFET) with integrated passive structures and methods of manufacturing the same is disclosed. The method includes forming a stacked structure in an active region and at least one shallow trench isolation (STI) structure adjacent to the stacked structure. The method further includes forming a semiconductor layer directly in contact with the at least one STI structure and the stacked structure. The method further includes patterning the semiconductor layer and the stacked structure to form an active device in the active region and a passive structure of the semiconductor layer directly on the at least one STI structure.

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