The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Sep. 06, 2017
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Kandabara N. Tapily, Mechanicville, NY (US);
Satoru Nakamura, Albany, NY (US);
Soo Doo Chae, Guilderland, NY (US);
Akiteru Ko, Schenectady, NY (US);
Kaoru Maekawa, Albany, NY (US);
Gerrit J. Leusink, Rexford, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Embodiments of the invention provide a wrap-around contact integration scheme that includes sidewall protection during contact formation. According to one embodiment, a substrate processing method includes providing a substrate containing raised contacts in a first dielectric film and a second dielectric film above the first dielectric film, depositing a metal-containing film on the second dielectric film, and forming a patterned metal-containing film by etching mask openings in the metal-containing film. The method further includes anisotropically etching recessed features in the second dielectric film above the raised contacts using the patterned metal-containing film as a mask, where the anisotropically etching forms a metal-containing sidewall protection film by redeposition of a portion of the patterned metal-containing film on sidewalls of the recessed features.