The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Jan. 30, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Hsien Chou, Tainan, TW;
Hung-Ling Shih, Tainan, TW;
Tsun-Kai Tsao, Tainan, TW;
Ming-Huei Shen, Yunlin County, TW;
Kuo-Hwa Tzeng, Taipei, TW;
Yeur-Luen Tu, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
In a method for fabricating a semiconductor device, a trench is etched in a semiconductor substrate having a top surface, and a lining oxide layer is formed conformal to the trench. A negatively-charged liner covering the lining oxide layer and conformal to the trench is formed. The trench is partially filled with a flowable oxide to a level below the top surface of the semiconductor substrate, and the flowable oxide in the trench is cured. The negatively-charged liner above the cured flowable oxide is optionally removed. A silicon oxide is deposited in the remaining portion of the trench, and a planarization process is performed to remove excess portions of the silicon oxide over the top surface of the semiconductor substrate.