The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Sep. 02, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Jung-Huei Peng, Hsinchu Hsien, TW;

Yi-Chien Wu, Taichung, TW;

Yu-Chia Liu, Kaohsiung, TW;

Chun-Wen Cheng, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01); B81C 99/00 (2010.01);
U.S. Cl.
CPC ...
B81C 99/0045 (2013.01);
Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure includes a cavity disposed in a substrate and enclosed by a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first electrode pair having a first electrode on the first surface and a second electrode on the second surface. The first electrode pair is configured to measure a first spacing between the first surface and the second surface. The semiconductor structure further includes a second electrode pair having a third electrode on the first surface and a fourth electrode on the second surface. The second electrode pair is configured to measure a second spacing between the first surface and the second surface.


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