The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
May. 29, 2018
Globalfoundries Inc., Grand Cayman, KY;
Xiaohan Wang, Clifton Park, NY (US);
Jiehui Shu, Clifton Park, NY (US);
Brendan O'Brien, Ballston Spa, NY (US);
Terry A. Spooner, Halfmoon, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Ravi Prakash Srivastava, Clifton Park, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Methods of self-aligned double patterning and improved interconnect structures formed by self-aligned double patterning. A mandrel line including an upper layer and a lower layer is formed over a hardmask. A non-mandrel cut block is formed over a portion of a non-mandrel line, after which the upper layer of the mandrel line is removed. An etch mask is formed over a first section of the lower layer of the mandrel line defining a mandrel cut block over a first portion of the hardmask. The first section of the lower layer is arranged between adjacent second sections of the lower layer. The second sections of the lower layer of the mandrel line are removed to expose respective second portions of the hardmask, and the second portions of the hardmask are removed to form a trench. The mandrel cut block masks the first portion of the hardmask during the etching process.