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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10192750 B1

PDFFull Text
Date of Patent:
Jan. 29, 2019

Filed:

May. 25, 2017

Plasma processing method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shinya Morikita, Miyagi, JP;

Ryosuke Niitsuma, Miyagi, JP;

Weichien Chen, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Rothwell, Figg, Ernet & Manbeck, P.C.

Primary Examiner:

Binh X Tran

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/308 (2006.01); H01L 21/67 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/3255 (2013.01); H01J 37/32449 (2013.01); H01J 37/32532 (2013.01); H01J 37/32541 (2013.01); H01J 37/32559 (2013.01); H01J 37/32568 (2013.01); H01J 37/32715 (2013.01); H01L 21/0273 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/67069 (2013.01); H01J 37/32724 (2013.01); H01J 2237/3341 (2013.01); H01L 21/67109 (2013.01); H01L 21/6831 (2013.01);
Abstract

Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a processing container. The plasma processing method includes: etching the antireflective film using plasma generated in the processing container and the first mask to form a second mask from the antireflective film; etching the organic film using plasma generated in the processing container and the second mask to form a third mask from the organic film; generating plasma of a mixed gas including the first gas and the second gas in the processing container; and etching the etching target layer using plasma generated in the processing container and the third mask.

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