The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Apr. 16, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hung-Pin Chang, Taipei, TW;
Kuo-Ching Hsu, Chung-Ho, TW;
Chen-Shien Chen, Zhubei, TW;
Wen-Chih Chiou, Zhunan Township, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An isolation structure for stacked dies is provided. A through-silicon via is formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the through-silicon via. An isolation film is formed over the backside of the semiconductor substrate and the exposed portion of the through-silicon via. The isolation film is thinned to re-expose the through-silicon via, and conductive elements are formed on the through-silicon via. The conductive element may be, for example, a solder ball or a conductive pad. The conductive pad may be formed by depositing a seed layer and an overlying mask layer. The conductive pad is formed on the exposed seed layer. Thereafter, the mask layer and the unused seed layer may be removed.