The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Apr. 24, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ching-Feng Fu, Taichung, TW;
De-Fang Chen, Hsinchu, TW;
Yu-Chan Yen, Taipei, TW;
Chia-Ying Lee, New Taipei, TW;
Chun-Hung Lee, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a pattern-reservation layer over a semiconductor substrate. The semiconductor substrate has a major surface. A first self-aligned multi-patterning process is performed to pattern a pattern-reservation layer. The remaining portions of the pattern-reservation layer include pattern-reservation strips extending in a first direction that is parallel to the major surface of the semiconductor substrate. A second self-aligned multi-patterning process is performed to pattern the pattern-reservation layer in a second direction parallel to the major surface of the semiconductor substrate. The remaining portions of the pattern-reservation layer include patterned features. The patterned features are used as an etching mask to form semiconductor nanowires by etching the semiconductor substrate.