The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Jun. 30, 2017
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Seung Ju Chun, Chungcheongnam-do, KR;

Yong Min Yoo, Seoul, KR;

Jong Wan Choi, Gyeonggi-do, KR;

Young Jae Kim, Chungcheongnam-do, KR;

Sun Ja Kim, Chungcheongnam-do, KR;

Wan Gyu Lim, Gyeonggi-do, KR;

Yoon Ki Min, Dongjak-gu, KR;

Hae Jin Lee, Chungcheongnam-do, KR;

Tae Hee Yoo, Chungcheongnam-do, KR;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76829 (2013.01); H01L 21/76877 (2013.01); H01L 21/76883 (2013.01); H01L 21/76885 (2013.01); H01L 21/76892 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 27/115 (2013.01); H01L 27/1157 (2013.01); H01L 27/11556 (2013.01);
Abstract

A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.

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