The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Apr. 06, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Li-Wei Feng, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Yi-Fan Li, Tainan, TW;
Kun-Hsin Chen, Pingtung County, TW;
Tong-Jyun Huang, Tainan, TW;
Jyh-Shyang Jenq, Pingtung County, TW;
Nan-Yuan Huang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/26 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/265 (2013.01); H01L 29/1054 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/7849 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/26546 (2013.01);
Abstract
A semiconductor device preferably includes a substrate, a fin-shaped structure on the substrate, a buffer layer on the fin-shaped structure, and an epitaxial layer on the buffer layer. Preferably, the buffer layer is made of silicon germanium and including three or more than three elements. The buffer layer also includes dopants selected from the group consisting of P, As, Sb, Bi, C, and F.