The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Dec. 15, 2015
Applicant:

Intel Ip Corporation, Santa Clara, CA (US);

Inventors:

Klaus Jürgen Reingruber, Langquaid, DE;

Sven Albers, Regensburg, DE;

Christian Georg Geissler, Teugn, DE;

Georg Seidemann, Landshut, DE;

Bernd Waidhas, Pettendorf, DE;

Thomas Wagner, Regelsbach, DE;

Marc Dittes, Regensburg, DE;

Assignee:

Intel IP Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); C25D 5/02 (2006.01); C25D 5/10 (2006.01); C25D 5/48 (2006.01); C25D 5/54 (2006.01); C25D 7/12 (2006.01); H01L 23/00 (2006.01); H05K 1/02 (2006.01); H05K 1/11 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); C25D 5/022 (2013.01); C25D 5/10 (2013.01); C25D 5/48 (2013.01); C25D 5/54 (2013.01); C25D 7/123 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/5226 (2013.01); H01L 24/09 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H05K 1/0296 (2013.01); H05K 1/111 (2013.01); H05K 1/115 (2013.01); H01L 23/49816 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/14 (2013.01);
Abstract

Semiconductor packages having variable redistribution layer thicknesses are described. In an example, a semiconductor package includes a redistribution layer on a dielectric layer, and the redistribution layer includes first conductive traces having a first thickness and second conductive traces having a second thickness. The first thickness may be different than the second thickness, e.g., the first thickness may be less than the second thickness.


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