The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Jan. 20, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ping Hung Li, Kaohsiung, TW;
Lun-Kuang Tan, Hsin-Chu, TW;
Hui-Ying Lu, New Taipei, TW;
Chia-Ao Chang, Jinhu Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method may include depositing a first conductive material in an opening disposed between a first semiconductor structure and a second semiconductor structure, the first conductive material comprising at least one first void. The method further includes removing a portion of the first conductive material to form a trench, the trench exposing the at least one first void and being defined by a remaining portion of the first conductive material; and depositing a second conductive material in the trench, the second conductive material and the remaining portion of the first conductive material forming a dummy gate layer.