The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Jan. 12, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/762 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/02057 (2013.01); H01L 21/02532 (2013.01); H01L 21/3065 (2013.01); H01L 21/76224 (2013.01); H01L 29/045 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a portion of the feature such that an interior portion of the feature is exposed; (iii) exposing a surface of the exposed interior portion to a surrounding containing oxygen; and (iv) treating the germanium oxide on the surface of the exposed interior portion with a liquid containing water.