The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Dec. 27, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jian-Hua Chen, Hsinchu, TW;
Tai-I Yang, Hsinchu, TW;
Cheng-Chi Chuang, New Taipei, TW;
Chia-Tien Wu, Taichung, TW;
Tien-Lu Lin, Hsinchu, TW;
Tien-I Bao, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a dielectric layer over a semiconductor substrate. The semiconductor device structure also includes a first conductive feature in the dielectric layer. A portion of the dielectric layer has a top surface that is provided on a different level in relation to a top surface of the first conductive feature. The semiconductor device structure further includes a second conductive feature in the dielectric layer and extending from a bottom surface of the first conductive feature. The portion of the dielectric layer is separated from the second conductive feature by a gap. A distance between the portion of the dielectric layer and the second conductive feature becomes smaller along a direction from the top surface of the first conductive feature towards the bottom surface of the first conductive feature.