The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

May. 13, 2011
Applicants:

Kyunghoon Lee, Kyunggi-Do, KR;

Seongwon Park, Kyoungki-do, KR;

Kiyoun Jang, Kyoungki-do, KR;

Jaehyun Lee, Kyunggi-Do, KR;

Inventors:

KyungHoon Lee, Kyunggi-Do, KR;

SeongWon Park, Kyoungki-do, KR;

KiYoun Jang, Kyoungki-do, KR;

JaeHyun Lee, Kyunggi-Do, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/50 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 21/563 (2013.01); H01L 23/3121 (2013.01); H01L 23/3128 (2013.01); H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 23/3192 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/94 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/03013 (2013.01); H01L 2224/0332 (2013.01); H01L 2224/0343 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/10135 (2013.01); H01L 2224/10165 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11452 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81007 (2013.01); H01L 2224/8114 (2013.01); H01L 2224/81139 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/381 (2013.01); H01L 2924/3841 (2013.01);
Abstract

A semiconductor device has a semiconductor die with an insulation layer formed over an active surface of the semiconductor die. A conductive layer is formed over the first insulating layer electrically connected to the active surface. A plurality of conductive pillars is formed over the conductive layer. A plurality of dummy pillars is formed over the first insulating layer electrically isolated from the conductive layer and conductive pillars. The semiconductor die is mounted to a substrate. A height of the dummy pillars is greater than a height of the conductive pillars to maintain the standoff distance between the semiconductor die and substrate. The dummy pillars can be formed over the substrate. The dummy pillars are disposed at corners of the semiconductor die and a central region of the semiconductor die. A mold underfill material is deposited between the semiconductor die and substrate.


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