The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Jun. 06, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chen-Hao Chiang, Jhongli, TW;
Po-Chun Liu, Hsinchu, TW;
Chi-Ming Chen, Zhubei, TW;
Min-Chang Ching, Zhubei, TW;
Chung-Yi Yu, Hsinchu, TW;
Chia-Shiung Tsai, Hsinchu, TW;
Ru-Liang Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/18 (2006.01); H01L 31/18 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/45 (2006.01); H01L 23/31 (2006.01); H01L 29/205 (2006.01); H01L 33/00 (2010.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7784 (2013.01); H01L 21/18 (2013.01); H01L 21/182 (2013.01); H01L 21/2258 (2013.01); H01L 21/3245 (2013.01); H01L 23/3171 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/452 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 31/18 (2013.01); H01L 31/1848 (2013.01); H01L 33/002 (2013.01); H01L 33/0025 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/10323 (2013.01); H01L 2924/10344 (2013.01);
Abstract
A semiconductor device includes an indium gallium nitride layer over an active layer. The semiconductor device further includes an annealed region beneath the indium gallium nitride layer, the annealed region comprising indium atoms driven from the indium gallium nitride layer into the active layer.