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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10079296 B1

PDFFull Text
Date of Patent:
Sep. 18, 2018

Filed:

Jun. 06, 2016

High electron mobility transistor with indium nitride layer

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Hao Chiang, Jhongli, TW;

Po-Chun Liu, Hsinchu, TW;

Chi-Ming Chen, Zhubei, TW;

Min-Chang Ching, Zhubei, TW;

Chung-Yi Yu, Hsinchu, TW;

Chia-Shiung Tsai, Hsinchu, TW;

Ru-Liang Lee, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Thanhha Pham

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/18 (2006.01); H01L 31/18 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/45 (2006.01); H01L 23/31 (2006.01); H01L 29/205 (2006.01); H01L 33/00 (2010.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7784 (2013.01); H01L 21/18 (2013.01); H01L 21/182 (2013.01); H01L 21/2258 (2013.01); H01L 21/3245 (2013.01); H01L 23/3171 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/452 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 31/18 (2013.01); H01L 31/1848 (2013.01); H01L 33/002 (2013.01); H01L 33/0025 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/10323 (2013.01); H01L 2924/10344 (2013.01);
Abstract

A semiconductor device includes an indium gallium nitride layer over an active layer. The semiconductor device further includes an annealed region beneath the indium gallium nitride layer, the annealed region comprising indium atoms driven from the indium gallium nitride layer into the active layer.

Find Patent Forward Citations

Chiang, Chen-Hao. (2018). High electron mobility transistor with indium nitride layer (U.S. Patent No. 10079296). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10079296

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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