The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Apr. 01, 2016
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

KyungHoon Lee, Kyunggi-Do, KR;

HyunJin Song, Kyunggi-Do, KR;

Kyoungll Huh, Kyunggi-Do, KR;

DaeSik Choi, Seoul, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 25/065 (2006.01); H01L 21/56 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/568 (2013.01); H01L 23/3114 (2013.01); H01L 23/5385 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/2518 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73209 (2013.01); H01L 2224/73259 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/81192 (2013.01); H01L 2224/92124 (2013.01); H01L 2224/94 (2013.01); H01L 2224/96 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/19104 (2013.01);
Abstract

A semiconductor device includes a semiconductor die. An encapsulant is deposited over the semiconductor die. An insulating layer is formed over the encapsulant and a first surface of the semiconductor die. A semiconductor component is disposed over the insulating layer and first surface of the semiconductor die. A first interconnect structure is formed over the encapsulant and first surface of the semiconductor die to embed the semiconductor component. A conductive via is formed in the semiconductor die. A heat sink is formed over the semiconductor die. A second interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the semiconductor component. An opening is formed in the insulating layer.


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