The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Oct. 17, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Li-Wei Feng, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Chao-Hung Lin, Changhua County, TW;
Hon-Huei Liu, Kaohsiung, TW;
Shih-Fang Hong, Tainan, TW;
Jyh-Shyang Jenq, Pingtung County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/2256 (2013.01); H01L 21/324 (2013.01); H01L 21/823814 (2013.01); H01L 21/823892 (2013.01); H01L 27/0924 (2013.01); H01L 29/66803 (2013.01); H01L 29/7851 (2013.01); H01L 21/823807 (2013.01);
Abstract
A semiconductor device includes: a fin-shaped structure on a substrate, in which the fin-shaped structure includes a top portion and a bottom portion; a doped layer around the bottom portion of the fin-shaped structure; a first liner on the doped layer, and a second liner on the top portion and the bottom portion of the fin-shaped structure. Preferably, the first liner and the second liner are made of different material.