The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Mar. 12, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Hsun-Chuan Shih, Hsinchu County, TW;

Sheng-Chi Chin, Hsinchu, TW;

Yuan-Chih Chu, New Taipei, TW;

Yueh-Hsun Li, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); G03F 1/26 (2012.01); G03F 1/72 (2012.01); G03F 1/74 (2012.01); G03F 1/82 (2012.01); H01L 21/44 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 21/285 (2006.01); C23C 16/455 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
G03F 1/72 (2013.01); C23C 16/047 (2013.01); C23C 16/45523 (2013.01); G03F 1/22 (2013.01); G03F 1/26 (2013.01); G03F 1/74 (2013.01); G03F 1/82 (2013.01); H01L 21/0262 (2013.01); H01L 21/02277 (2013.01); H01L 21/02334 (2013.01); H01L 21/02337 (2013.01); H01L 21/02664 (2013.01); H01L 21/28556 (2013.01); H01L 21/321 (2013.01);
Abstract

A method includes loading a mask having a defect into a chamber. The defect of the mask is repaired by forming a repair feature in a repair region of the mask. The forming the repair feature includes irradiating the repair region of the mask with a radiation beam. The forming the repair feature further includes while irradiating the repair region, injecting a precursor gas into the chamber to form a first film of the repair feature on the repair region, and while irradiating the repair region, injecting a cleaning gas into the chamber. The cleaning gas reacts with an impurity material in the first film to transform the first film into a first cleaned film.


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