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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10049921 B1

PDFFull Text
Date of Patent:
Aug. 14, 2018

Filed:

Aug. 20, 2014

Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Nerissa Sue Draeger, Fremont, CA (US);

Kaihan Abidi Ashtiani, Cupertino, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Derek B. Wong, San Jose, CA (US);

Bart J. van Schravendijk, Palo Alto, CA (US);

George Andrew Antonelli, Portland, OR (US);

Artur Kolics, Dublin, CA (US);

Lie Zhao, Lake Oswego, OR (US);

Patrick A. van Cleemput, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:

Weaver Austin Villeneuve & Sampson LLP

Primary Examiner:

Michael Jung

Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01); C23C 16/56 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76826 (2013.01); C23C 16/045 (2013.01); C23C 16/401 (2013.01); C23C 16/56 (2013.01); H01L 21/76814 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 21/76825 (2013.01);
Abstract

Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.

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Draeger, Nerissa. (2018). Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor (U.S. Patent No. 10049921). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10049921

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