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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10042259 B1

PDFFull Text
Date of Patent:
Aug. 07, 2018

Filed:

Oct. 12, 2017

Topcoat compositions and pattern-forming methods

Applicant:

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Inventors:

Irvinder Kaur, Northborough, MA (US);

Cong Liu, Shrewsbury, MA (US);

Doris Kang, Shrewsbury, MA (US);

Mingqi Li, Shrewsbury, MA (US);

Deyan Wang, Hudson, MA (US);

Huaxing Zhou, Furlong, PA (US);

Assignee:

Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);

Attorney:

Jonathan D. Baskin

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/11 (2006.01); C08F 20/34 (2006.01); C08F 222/40 (2006.01); C08L 33/16 (2006.01); C09D 133/08 (2006.01); C09D 133/10 (2006.01); C09D 133/16 (2006.01); G03F 7/00 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/32 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08F 20/34 (2013.01); C08F 222/40 (2013.01); C08L 33/16 (2013.01); C09D 133/08 (2013.01); C09D 133/10 (2013.01); C09D 133/16 (2013.01); G03F 7/0002 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/327 (2013.01); H01L 21/0274 (2013.01); C08L 2205/025 (2013.01);
Abstract

Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: Rrepresents H, F, methyl or fluorinated methyl; Rrepresents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; Rrepresents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; Rrepresents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR, wherein Ris chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

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