The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Nov. 18, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Chiang Tu, Tauyen, TW;
Chun-Lang Chen, Tainan County, TW;
Chue San Yoo, Hsin-Chu, TW;
Jong-Yuh Chang, Hsinchu County, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Ping-Yin Liu, Taipei County, TW;
Hsin-Chang Lee, Hsinchu County, TW;
Chih-Cheng Lin, Kaohsiung, TW;
Yun-Yue Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
A method includes depositing a first material layer over a first substrate; and depositing a graphene layer over the first material layer. The method further includes depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The method further includes annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer. The method further includes removing the first substrate from the assembly and removing the first material layer from the assembly, thereby exposing the graphene layer.