The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Jan. 30, 2015
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Keng-Ying Liao, Tainan, TW;
Chung-Bin Tseng, Tainan, TW;
Cheng-Hsien Chou, Tainan, TW;
Jiech-Fun Lu, Tainan, TW;
Po-Zen Chen, Tainan, TW;
Yi-Hung Chen, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The BSI image sensor includes a semiconductive substrate, a deep trench isolation (DTI) at a back side of the semiconductive substrate, and a dielectric layer. the dielectric layer includes a top portion over the back side, and a side portion lined to a sidewall of the DTI. The BSI image sensor includes a planarization stop layer disposed conformally on top of the dielectric layer. The planarization stop layer includes a top section on the top portion, a side section lined against the side portion, and a first transmittance. The BSI image sensor includes a low-transparent material inside the DTI, and the low-transparent material includes a second transmittance. The second transmittance is lower than the first transmittance.