The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Jul. 14, 2017
Applicant:

Novellus Systems, Inc., Fremont, CA (US);

Inventors:

Hu Kang, Tualatin, OR (US);

Shankar Swaminathan, Beaverton, OR (US);

Adrien LaVoie, Newberg, OR (US);

Jon Henri, West Linn, OR (US);

Assignee:

Novellus Systems, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/4554 (2013.01); C23C 16/45542 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract

Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.


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