The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Nov. 30, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hsin-Hsien Chen, New Taipei, TW;
Sheng-Yuan Hsueh, Tainan, TW;
Yi-Chung Sheng, Tainan, TW;
Chih-Kai Kang, Tainan, TW;
Wen-Kai Lin, Yilan County, TW;
Shu-Hung Yu, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/76897 (2013.01); H01L 23/5283 (2013.01); H01L 28/60 (2013.01); H01L 29/0649 (2013.01);
Abstract
An intra-metal capacitor is provided. The intra-metal capacitor is formed in a dielectric layer and comprising a first electrode and a second electrode, wherein the first electrode penetrate through the whole thickness of the dielectric layer, and the second electrode does not penetrate through the whole thickness of the dielectric layer.