Hsinchu, Taiwan

Zy Ying Lin

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zy Ying Lin. Retrieved from https://idiyas.com/inventor/zy-ying-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2006

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Zy Ying Lin

Introduction

Zy Ying Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of photolithography, particularly in the repair of exposure masks used in semiconductor manufacturing. His innovative approach has garnered attention in the industry.

Latest Patents

Zy Ying Lin holds a patent for a "Quartz damage repair method for high-end mask." This method involves using focused ion-beam exposure to intentionally damage the surface of photolithographic exposure masks. The technique is designed to enhance the areas where opaque or light-blocking materials are required, thereby improving the overall quality and efficiency of the manufacturing process. He has 1 patent to his name.

Career Highlights

Zy Ying Lin is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in technology.

Collaborations

One of his notable coworkers is Same-Ting Chen. Their collaboration has likely fostered an environment of innovation and creativity within their projects.

Conclusion

Zy Ying Lin's contributions to the field of semiconductor manufacturing through his innovative patent demonstrate his commitment to advancing technology. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…