This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Zong-You Luo and Magnetic Tunnel Junction Innovation.
Introduction
Zong-You Luo is an inventor based in Hsinchu, Taiwan. His patent work includes a magnetic tunnel junction design related to spin-orbit torque magnetic random-access memory (SOT-MRAM).
Latest Patents
Luo is associated with 1 patent, titled “Magnetic Tunnel Junction Structures and Related Methods.” The disclosure describes an SOT-MRAM channel made with multiple heavy-metal layers and dielectric dusting layers placed between adjacent heavy-metal layers. The dielectric material appears as discrete molecules or clusters scattered in or near the interfaces between those layers. The design concerns structures and methods for SOT-MRAM.
Career Highlights
Luo is associated with Taiwan Semiconductor Manufacturing Co., Ltd. His patent record highlights work on materials and layered structures for memory technology.
Collaborations
His listed coworkers include Ya-Jui Tsou and I-Cheng Tung. Their names appear alongside Luo’s professional and patent information.
Conclusion
Zong-You Luo’s patent work focuses on a layered SOT-MRAM channel that incorporates dielectric material at interfaces between heavy-metal layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile